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for dry etching. The etching rate of Cu in the 50 to 700 Å/min range depended on the substrate temperature the H(hfac)/O2 flow rate ratio and the plasma power.

I am using an MMA/PMMA stack as a negative resist. I am etching it in the DRIE using 25 sccm of C4F8 and 125 sccm Ar at 10 C. The source power is 1000 W

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Figure 6.4. Construction of the Wastewater Composite Stream on The Mass Exchange Pinch Diagram. Next the process MSA's are plotted in a similar manner

5 Jan 2018 The effect of the current density and the presence of a microporous layer within the working electrode are then evaluated. Copper-based gas

THE ALL-ROUNDER. A universally applicable heat treatment plant for small and medium capacity numerous types of components and a large variety of

All information concerning our products equipment and processes is based on extensive research work and application technology experience. We provide

New concept continual integration process of ElectroLess Copper plating and Flash Cu plating. This is a new concept metallization process that achieves highly

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